"Transition of Single-Walled Carbon Nanotubes from Metallic to Semiconducting in Field-Effect Transistors by Hydrogen Plasma Treatment"
Gang Zheng, Qunqing Li, Kaili Jiang, Xiaobo Zhang, Jia Chen, Zheng Ren, and Shoushan Fan
Nano Lett. 2007, ASAP published on 05/18/2007.
10.1021/nl070585w
Qunqing Li and coworkers from Tsinghua University in China reported that hydrogen plasma may be used to offer semiconducting properties to the metallic SWNTs in their devices for FET by opening band-gap in the DOS.
The idea seems to be not really novel, since the sidewall chemical functionalization (here by hydrogenation) is known to be able to do such work.
No metallicity selectivity (semiconducting vs metallic) was reported.
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